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 Super SIDELED(R) High-Current LED
LS A672, LO A672, LY A672 LG A672, LP A672
Besondere Merkmale
q Gehausefarbe: wei q als optischer Indikator einsetzbar q besonders geeignet bei hohem Umgebungslicht durch q q q q
Features
q color of package: white q for use as optical indicator q appropriate for high ambient light because of the higher q q q q
operating current ( 50 mA DC) for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and reflow soldering methods available taped on reel (12 mm tape) load dump resistant acc. to DIN 40839
Semiconductor Group
1
1998-11-12
VPL06880
erhohten Betriebsstrom ( 50 mA DC) zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestuck- und Reflow-Lottechniken geeignet gegurtet (12-mm-Filmgurt) Storimpulsfest nach DIN 40839
LS A672, LO A672, LY A672 LG A672, LP A672
Typ
Emissionsfarbe Color of Emission
Type
Farbe der Lichtaustrittsflache Color of the Light Emitting Area colorless clear
Lichtstarke
Lichtstrom
Bestellnummer
Luminous Intensity IF = 50 mA IV (mcd) 10 25 40 25 10 25 40 25 10 25 40 16 10 25 40 16 ... 80 ... 50 ... 80 ... 200 ... 80 ... 50 ... 80 ... 200 ... 50 ... 50 ... 80 ... 125 ... 80 ... 50 ... 80 ... 125 50 20 32 50 80
Luminous Flux IF = 50 mA V (mlm) 100 (typ.) 180 (typ.) 100 (typ.) 180 (typ.) 100 (typ.) 180 (typ.) 100 (typ.) 180 (typ.) 45 (typ.) 75 (typ.) 100 (typ.) -
Ordering Code
s s s s s s s s s s s s
LS A672-LP LS A672-N LS A672-P LS A672-NR LO A672-LP LO A672-N LO A672-P LO A672-NR LY A672-LN LY A672-N LY A672-P LY A672-MQ LG A672-LP LG A672-N LG A672-P LG A672-MQ LP A672-KN LP A672-L LP A672-M LP A672-N LP A672-LP
super-red
Q62703-Q2761 Q62703-Q2849 Q62703-Q3226 Q62703-Q2850 Q62703-Q2548 Q62703-Q2851 Q62703-Q2852 Q62703-Q2853 Q62703-Q2553 Q62703-Q2854 Q62703-Q2855 Q62703-Q2856 Q62703-Q2544 Q62703-Q2857 Q62703-Q2858 Q62703-Q2859 Q62703-Q2860 Q62703-Q3838 Q62703-Q3839 Q62703-Q3148 Q62703-Q2863
orange
colorless clear
yellow
colorless clear
green
colorless clear
pure green
colorless clear
6.3 ... 10 ... 16 ... 25 ... 10 ...
s Nicht fur Neuentwicklungen / Not for new design
Streuung der Lichtstarke in einer Verpackungseinheit IV max / IV min 2.0. Luminous intensity ratio in one packaging unit IV max / IV min 2.0.
Semiconductor Group
2
1998-11-12
LS A672, LO A672, LY A672 LG A672, LP A672
Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspannung Reverse voltage Verlustleistung Power dissipation Warmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgroe je 16 mm2) mounted on PC board*) (padsize 16 mm2 each ) *) PC-board: FR4 Symbol Symbol Werte Values - 55 ... + 100 - 55 ... + 100 + 100 50 1 Einheit Unit C C C mA A
Top Tstg Tj IF IFM
VR Ptot Rth JA
5 190 330
V mW K/W
Semiconductor Group
3
1998-11-12
LS A672, LO A672, LY A672 LG A672, LP A672
Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 10 mA Dominantwellenlange Dominant wavelength IF = 10 mA Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 10 mA Abstrahlwinkel bei 50 % Iv (Vollwinkel) Viewing angle at 50 % Iv Durchlaspannung Forward voltage IF = 50 mA Sperrstrom Reverse current VR = 5 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100mA, tp = 10 s, RL = 50 *) VF max = 3.2 V as of Febr. 97 (typ.) (max.) (typ.) (max.) (typ.) (typ.) (typ.) (typ.) (typ.) (typ.) (typ.) Symbol Symbol LS LO 610 Werte Values LY 586 LG 565 LP 557 nm 635 Einheit Unit
peak
dom
628
605
590
570
560
nm
45
40
45
25
22
nm
2
120 2.0 3.8
120 2.1 3.8
120 2.2 3.8
120 2.6 3.8
120
deg.
VF VF IR IR C0
2.6 V 3.8*) V
0.01 0.01 0.01 0.01 0.01 A 10 10 10 10 10 A 40 35 35 60 80 pF
(typ.) (typ.)
tr tf
350 200
500 250
350 200
500 250
500 250
ns ns
Semiconductor Group
4
1998-11-12
LS A672, LO A672, LY A672 LG A672, LP A672
Relative spektrale Emission Irel = f (), TA = 25 C, IF = 10 mA Relative Spectral Emission V () = spektrale Augenempfindlichkeit Standard eye response curve
100 % rel 80
OHL01698
V
60
red
pure-green green
orange
20
0 400
blue
450
500
550
yellow
40
600
super-red
650
hyper-red
nm
700
Abstrahlcharakteristik Irel = f () Radiation characteristic
40 30 20 10 0
OHL01660
1.0
50
0.8
0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0
Semiconductor Group
5
1998-11-12
LS A672, LO A672, LY A672 LG A672, LP A672
Durchlastrom IF = f (VF) Forward current TA = 25 C
Relative Lichtstarke IV/IV(50 mA) = f (IF) Relative luminous intensity TA = 25 C
Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C
Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA)
Semiconductor Group
6
1998-11-12
LS A672, LO A672, LY A672 LG A672, LP A672
Wellenlange der Strahlung peak = f (TA) Wavelength at peak emission IF = 10 mA
690
OHL02104
Dominantwellenlange dom = f (TA) Dominat wavelength IF = 10 mA
690
OHL02105
peak
nm 650 super-red 630 orange 610 590 570 550 yellow
dom
nm 650 630 610 590 570 550 super-red
orange yellow green pure-green 0 20 40 60 80 C 100
green pure-green 0 20 40 60 80 C 100
TA
TA
Durchlaspannung VF = f (TA) Forward voltage IF = 50 mA
Relative Lichtstarke IV / IV(25 C) = f (TA) Relative luminous intensity IF = 50 mA
Semiconductor Group
7
1998-11-12
LS A672, LO A672, LY A672 LG A672, LP A672
Mazeichnung Package Outlines
(Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified)
(2.4)
2.8 2.4
4.2 3.8 0.7
Cathode Cathode marking
2.54 spacing (1.4)
1.1 0.9 Anode
(0.3)
(2.85)
(2.9)
(R1)
3.8 3.4
4.2 3.8
Kathodenkennung: Cathode mark:
abgeschragte Ecke bevelled edge
Semiconductor Group
8
1998-11-12
GPL06880


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